| 摘要 |
This semiconductor device is provided with: a semiconductor chip (11, 11H, 11L) having an electrode (12) on one surface (11a); a first conductive member (23, 23H, 23L) on the one surface side of the semiconductor chip; a metal member (18, 18H, 18L), which has a base material (19a) and a film (19b), and is disposed between the semiconductor chip and the first conductive member; a first solder (17) between the metal member and the electrode of the semiconductor chip; and a second solder (22) between the metal member and the first conductive member. The film has, on the front surface of the base material, a metal thin film (20) and a recessed and protruding oxide film (21, 31, 32). The recessed and protruding oxide film is disposed on the metal thin film in a part of a connection region (18f) that connects to each other a first connection region (18d) having the first solder connected thereto, and a second connection region (18e) having the second solder connected thereto, said part being a part of the front surface of the metal member. |
