Semiconductor apparatus including protective film on gate electrode and method for manufacturing the semiconductor apparatus

摘要

A semiconductor apparatus includes a substrate, a semiconductor layer formed above the substrate and including a nitride semiconductor, an electrode formed above the semiconductor layer and including gold, a barrier film formed above the electrode and a protection film formed above the semiconductor layer and including one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film. The protection film is formed on the barrier film. The barrier film includes a metal oxide material, a metal nitride film, or a metal oxynitride film.

主权项

1. A method for manufacturing a semiconductor apparatus comprising:
forming a semiconductor layer including a nitride semiconductor above a substrate; forming an electrode including gold and having a top surface and a side surface; forming a metal film on the electrode; forming a barrier film on the metal film; and forming a protection film above the semiconductor layer and on the barrier film, the protection film including one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film; wherein the barrier film is formed of a material that includes one of an oxide, a nitride, and an oxinitride of the metal film, wherein the barrier film is configured to prevent the gold included in the electrode from contacting one of the silicon oxide film, the silicon nitride film, and the silicon oxynitride film included in the protection film.