High-electron-mobility transistor

摘要

A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

主权项

1. A high-electron-mobility transistor device comprising;
a first semiconductor layer and a second semiconductor layer that are sequentially stacked; an etch-stop layer formed on the second semiconductor layer, the etch-stop layer including silicon carbon nitride (SixC1-xN), where 0