Semiconductor package for a lateral device and related methods

摘要

A semiconductor package. Implementations may include a lateral device that may include a lateral semiconductor device including one of interspersed and interdigitated source and drain regions and one or more gate regions, a single layer clip, and a leadframe. The single layer clip may be coupled to the one of interspersed and interdigitated source and drain regions and the one or more gate regions and to the leadframe. The single layer clip may be configured to redistribute and to isolate source, drain, and gate signals passing into and out from the lateral semiconductor device during operation of the semiconductor device package.

主权项

1. A method of manufacturing a semiconductor device package, the method comprising:
coupling a single layer clip comprising at least one source finger, at least one drain finger, and at least one gate finger to a plurality of source standoff contacts, a plurality of drain standoff contacts, and one or more gate standoff contacts, respectively, comprised in a lateral semiconductor device; coupling a leadframe to the single layer clip, the leadframe comprising at least one source section, at least one drain section, and at least one gate section; one of overmolding and encapsulating the lateral semiconductor device, a majority of the single layer clip, and a face of the leadframe facing the lateral semiconductor device with a mold compound; and singulating the at least one source finger, the at least one drain finger, and the at least one gate finger.