METHOD FOR PRODUCING THE LAYER STRUCTURE OF A SEMICONDUCTOR COMPONENT

摘要

The invent relates to measures for leveling the surface of the layer structure of a semiconductor component during the production of the layer structure, which measures are simple in terms of process and can also be used to produce a topography having defined level differences in the surface of the layer structure. For this purpose, at least one first layer (2) composed of a material other than silicon is produced and structured on a silicon layer (1), wherein the silicon layer (1) lying under the at least one first layer is exposed in the region of at least one opening (3). Thereafter, silicon is selectively grown epitaxially on the exposed surface and a defined topography for the production of further layers is thereby created.