Semiconductor structure with a multilayer gate oxide and method of fabricating the same

摘要

A semiconductor structure with a multilayer gate oxide is provided. The structure includes a substrate. A multilayer gate oxide is disposed on the substrate, wherein the multilayer gate oxide includes a first gate oxide and a second gate oxide. The first gate oxide contacts the substrate and the second gate oxide is disposed on and contacts the first gate oxide. The second gate oxide is hydrophilic. The first gate oxide is formed by a thermal oxidation process. The second gate oxide is formed by a chemical treatment.

主权项

1. A semiconductor structure with a multilayer gate oxide, comprising:
a substrate; a multilayer gate oxide disposed on the substrate, wherein the multilayer gate oxide comprises:
a first gate oxide contacting the substrate; anda second gate oxide disposed on and contacting the first gate oxide, wherein the second gate oxide is hydrophilic and the second gate oxide is silicon oxide.