Manufacturing method of two-dimensional transition-metal chalcogenide thin film

摘要

A manufacturing method of a two-dimensional transition-metal chalcogenide thin film includes providing a substrate, providing a reaction film, providing a source and providing a microwave. The substrate is made of material having dipole moments. The reaction film, disposed on the substrate, has a predefined thickness and includes a transition-metal compound. The source includes S, Se, or Te. The substrate is heated by the microwave to produce a heat energy to the reaction film and the source; thus a chemical reaction takes place and the two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal thin film includes a plurality of elements, and each of the elements aligns along a predefined direction by controlling a value of the predefined thickness.

主权项

1. A manufacturing method of a two-dimensional transition-metal chalcogenide thin film, comprising:
providing a substrate, wherein the substrate is made of material having dipole moments; providing a reaction film disposed on the substrate, wherein the reaction film has a predefined thickness and comprises a transition-metal compound; providing a source, wherein the source comprises S, Se or Te; and providing a microwave, wherein the substrate is heated by the microwave to produce a heat energy to the reaction film and the source, thus a chemical reaction takes place and the two-dimensional transition-metal chalcogenide thin film formed on the substrate; wherein the two-dimensional transition-metal thin film comprises a plurality of elements, and each of the elements aligns along a predefined direction by controlling a value of the predefined thickness.