Recovery of partially programmed block in non-volatile memory

摘要

Techniques for recovery of partially programmed blocks in non-volatile storage are disclosed. After programming memory cells in an open region of a partially programmed block, a fail bit count with respect to programming the memory cells is performed. If the fail bit count is above a threshold, then a recovery operation is performed of other memory cells in the partially programmed block. The recovery operation (such as erase) may remove charges that are trapped in the tunnel dielectric of memory cells in the open region of the partially programmed block. Note that this erase operation may be performed on memory cells in the open region that are already erased. The erase operation may remove trapped charges from the tunnel dielectric. In a sense, this “resets” the memory cells. Thus, the memory cells can now be programmed more effectively. Both programming and date retention may be improved.

主权项

1. A non-volatile storage device, comprising:
a plurality of blocks that comprise non-volatile storage elements; and managing circuitry in communication with the non-volatile storage elements; the managing circuitry configured to program a set of non-volatile storage elements in a block that comprises programmed non-volatile storage elements and unprogrammed non-volatile storage elements; the managing circuitry configured to determine a fail bit count of programming the set of non-volatile storage elements; the managing circuitry configured to perform a recovery operation that involves unprogrammed non-volatile storage elements in the block other than those in the set, in response to determining that the fail bit count exceeds a first threshold, to perform the recovery operation the managing circuitry configured to program one or more of the unprogrammed non-volatile storage elements in the block with dummy data when the fail bit count is less than a second threshold.