| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a pattern on a film that has a good selection ratio with respect to a specific etching target film.SOLUTION: There is provided a plasma etching method including the step of etching a film including a zirconium oxide film to a desired pattern that is formed on a first mask by plasma generated from gas comprising hydrogen bromide HBr and one of boron trichloride BClor silicon tetrachloride SiCl. A substrate film of the zirconium oxide film is a silicon oxide film or amorphous carbon, and the etching selection ratio of a zirconium oxide film with respect to the substrate film is 1 or more.SELECTED DRAWING: Figure 5 |
