发明名称 |
MINUTE CRACKING FORMING METHOD AND MINUTE CRACKING FORMING DEVICE OF SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a minute cracking forming method of a semiconductor substrate capable of efficiently obtaining chips of stable quality and a minute cracking forming device.SOLUTION: The minute cracking forming method of a semiconductor substrate for forming, on a wafer inside which a modified area is formed by a laser beam, a minute cracking which becomes an originating point of cutting the wafer includes a grinding step for developing the minute cracking extending from the modified area by grinding the rear surface of the wafer in a state where a surface of the wafer is vacuum chucked to a table.SELECTED DRAWING: Figure 15 |
申请公布号 |
JP2016201551(A) |
申请公布日期 |
2016.12.01 |
申请号 |
JP20160121905 |
申请日期 |
2016.06.20 |
申请人 |
TOKYO SEIMITSU CO LTD |
发明人 |
OSHIDA SHUHEI;SHIMIZU TASUKU;FUJITA TAKASHI;UEKIHARA AKIRA |
分类号 |
H01L21/301;B23K26/53;B24B1/00;B24B7/22;H01L21/304 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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