发明名称 MINUTE CRACKING FORMING METHOD AND MINUTE CRACKING FORMING DEVICE OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a minute cracking forming method of a semiconductor substrate capable of efficiently obtaining chips of stable quality and a minute cracking forming device.SOLUTION: The minute cracking forming method of a semiconductor substrate for forming, on a wafer inside which a modified area is formed by a laser beam, a minute cracking which becomes an originating point of cutting the wafer includes a grinding step for developing the minute cracking extending from the modified area by grinding the rear surface of the wafer in a state where a surface of the wafer is vacuum chucked to a table.SELECTED DRAWING: Figure 15
申请公布号 JP2016201551(A) 申请公布日期 2016.12.01
申请号 JP20160121905 申请日期 2016.06.20
申请人 TOKYO SEIMITSU CO LTD 发明人 OSHIDA SHUHEI;SHIMIZU TASUKU;FUJITA TAKASHI;UEKIHARA AKIRA
分类号 H01L21/301;B23K26/53;B24B1/00;B24B7/22;H01L21/304 主分类号 H01L21/301
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