发明名称 Plasma processing apparatus
摘要 A dielectric member is provided at the upper portion of a grounded vacuum reaction vessel. Other portion of the vacuum reaction vessel is grounded. A flow path is formed within the dielectric member. The flow path is covered with a conductive member and an insulation member. The conductive member is grounded at the same voltage as the vacuum reaction vessel. Also, a temperature measuring element is buried within the dielectric member. The temperature measured by the temperature measuring element is fed back so that the temperature of the hot insulation medium is controlled. Thus, the temperature of the dielectric member is maintained constant within a range of 60 DEG to 160 DEG C.
申请公布号 US5846331(A) 申请公布日期 1998.12.08
申请号 US19970838533 申请日期 1997.04.09
申请人 NEC CORPORATION 发明人 MIYAMOTO, HIDENOBU
分类号 C23F4/00;H01J37/32;H01L21/00;H01L21/302;H01L21/3065;H01L21/687;(IPC1-7):C23C16/00 主分类号 C23F4/00
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