发明名称 METHOD OF DEPOSITING LOW STRESS FILMS
摘要 A method of forming solder bumps (314) on a semiconductor wafer utilizing a low temperature biasable electrostatic chuck. In particular, the method comprises the steps of providing at least one bond pad (304) on the semiconductor wafer, forming a barrier layer (312) over the bond pad, and forming the solder bumps (314) upon the at least one bond pad. By controlling the temperature and biasing of the electrostatic chuck, the barrier layer, such as nickel vanadium, exhibits a low tensile or compressive stress.
申请公布号 WO0184619(A2) 申请公布日期 2001.11.08
申请号 WO2001US13961 申请日期 2001.04.30
申请人 APPLIED MATERIALS, INC. 发明人 SAIGAL, DINESH;ATHREYA, SHANKARRAM;NGAN, KENNY, KING-TAI;YANG, LISA, L.
分类号 H01L21/60;H01L21/683;H01L23/485 主分类号 H01L21/60
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