| 摘要 |
A light emitting semiconductor device, which includes a Ga0 9 In0 1 As0 97 active layer disposed between lower n-Ga0 5 In0 5P and upper p-Ga0 5 In0 5 P cladding layers, being provided with lower and upper GaAs spacing layers each intermediate the active layer and the cladding layer. The active layer is approximately lattice-matched to a GaAs substrate and has a thickness of about 0.1 mum with a photoluminescence peak wavelength of approximately 1.3 mum, and the GaAs spacing layers each have a thickness of about 2 nm.
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