| 发明名称 |
ELECTRODE STRUCTURES FOR P-TYPE NITRIDE SEMICONDUCTORES AND MEHTODS OF MAKING SAME |
| 摘要 |
A semiconductor device includes a semiconductor structure having a p-type nitride semiconductor defining a top surface (17), a buffer layer (20) composed predominantly of a p-type metal oxide semiconductor overlying the top surface (17), and an electrode (26) including one or more metals overlying the buffer layer (20).
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| 申请公布号 |
WO02056394(A1) |
申请公布日期 |
2002.07.18 |
| 申请号 |
WO2002US00310 |
申请日期 |
2002.01.08 |
| 申请人 |
EMCORE CORPORATION;ELIASHEVICH, IVAN |
发明人 |
ELIASHEVICH, IVAN |
| 分类号 |
H01L29/20;H01L29/45;H01L33/32;H01L33/40;H01L33/42;(IPC1-7):H01L33/00;H01L21/28 |
主分类号 |
H01L29/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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