| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance rage sensor by adding a standard CMOS or a simplified step. SOLUTION: An oxide film (3) is provided on a silicon substrate (20), and two photo-gate electrodes (1 and 2) for charge transfer are provided thereon. Floating diffused layers (5 and 6) for taking out charge from a light reception layer (4) are provided on an edge of the oxide film, and a resetting gate electrode and a diffused layer for supplying reset potential are also provided on the outside thereof. COPYRIGHT: (C)2005,JPO&NCIPI
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