| 发明名称 |
Method and Structure of Strain Control of Sige Based Photodetectors and Modulators |
| 摘要 |
A SiGe or Ge structure comprises a substrate and a SiGe or Ge layer that is formed on a first surface of the substrate. A silicidation or germanide layer is formed on a second surface of the substrate so to increase the tensile strain of the SiGe or Ge layer on the first surface.
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| 申请公布号 |
US2007286952(A1) |
申请公布日期 |
2007.12.13 |
| 申请号 |
US20040566686 |
申请日期 |
2004.07.29 |
| 申请人 |
LIU JIFENG;CANNON DOUGLAS D;WADA KAZUMI;JONGTHAMMANURAK SAMERKHAE;DANIELSON DAVID T;MICHEL JURGEN;KIMERLING LIONEL C |
发明人 |
LIU JIFENG;CANNON DOUGLAS D.;WADA KAZUMI;JONGTHAMMANURAK SAMERKHAE;DANIELSON DAVID T.;MICHEL JURGEN;KIMERLING LIONEL C. |
| 分类号 |
H01L21/20;C30B25/18;C30B29/08;H01L31/028;H01L31/18 |
主分类号 |
H01L21/20 |
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