| 摘要 |
A fabricating method for patterned sapphire substrate is provided. The fabricating method includes the following processes. First, a sapphire substrate is provided, and a mask layer is formed on the sapphire substrate, wherein the mask layer with appropriate pattern exposes a part of the sapphire substrate. Then, a wet etching process is performed to remove the exposed part of the sapphire substrate, wherein an etchant in the wet etching process includes sulfuric acid and the mixture of the sulfuric acid and the phosphoric acid. Next, the mask layer is removed to form the patterned sapphire substrate. Further, a fabricating method for light-emitting diode is provided.
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