发明名称 Thin Film Transistor and Display Device, and Method for Manufacturing Thereof
摘要 The present invention discloses a display device and a manufacturing method thereof by which a manufacturing process can be simplified. Further, the present invention discloses technique for manufacturing a pattern such as a wiring into a desired shape with good controllability. A method for forming a pattern for constituting the display device according to the present invention comprises the steps of forming a first region and a second region; discharging a composition containing a pattern formation material to a region across the second region and the first region; and flowing a part of the composition discharged to the first region into the second region; wherein wettability with respect to the composition of the first region is lower than that of the second composition.
申请公布号 US2008315428(A1) 申请公布日期 2008.12.25
申请号 US20050586661 申请日期 2005.02.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUJII GEN
分类号 H01L21/768;B05D1/26;G02F1/1362;H01L21/28;H01L21/288;H01L21/3205;H01L21/336;H01L21/77;H01L21/84;H01L23/535;H01L29/786;H05K3/12 主分类号 H01L21/768
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