发明名称 |
SPLIT GATE TYPE NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
In a split gate type nonvolatile memory device and a method of fabricating the same. A supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level.
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申请公布号 |
US2008318406(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080194202 |
申请日期 |
2008.08.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON HEE-SEOG;YOON SEUNG-BEOM;HAN JEONG-UK;KIM YONG-TAE |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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