发明名称 PHOTODETECTOR
摘要 PROBLEM TO BE SOLVED: To increase light absorption efficiency of an L band while suppressing reduction of an operation speed and deterioration of a signal-to-noise ratio.SOLUTION: A photodetector comprises a first silicon layer 101, an absorption layer 102, a second silicon layer 103, a first electrode 104, a second electrode 105 and a core 106. The first silicon layer 101 extends from a light input terminal 111 in a light guide direction, and light inputted from the light input terminal 111 is guided. The absorption layer 102 is comprised of germanium and formed on the first silicon layer 101 while extending in the light guide direction together with the first silicon layer 101. The absorption layer 102 is formed thinner as it is away from the light input terminal 111.SELECTED DRAWING: Figure 1
申请公布号 JP2016092048(A) 申请公布日期 2016.05.23
申请号 JP20140221100 申请日期 2014.10.30
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;UNIV OF TOKYO 发明人 TAKEDA KOTARO;YAMADA KOJI;FUKUDA HIROSHI;WADA KAZUMI;ISHIKAWA YASUHIKO
分类号 H01L31/10 主分类号 H01L31/10
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