| 摘要 |
PROBLEM TO BE SOLVED: To evaluate plasma (process) included damage (PID) based on Vth shift to a device under test (DUT) in the substantial same area as an existent MISFET by applying a structure and a measurement technique to which well-known charge based capacitance measurement (CBCM) capable of performing minute capacitance measurement is applied.SOLUTION: When evaluating the PID including a pseudo inverter and a CBCM circuit including a gate capacitance DUT, a counter electrode is provided for an antenna that becomes a PID source and by supplying a clock signal of the same phase as a DUT gate, floating capacitance of the antenna is cancelled. The present technology may be applicable to CMOS.SELECTED DRAWING: Figure 6 |
