发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE |
摘要 |
A multi-gate structure is used and a width (d1) of a high concentration impurity region sandwiched by two channel forming regions in a channel length direction is set to be shorter than a width (d2) of low concentration impurity regions in the channel length direction. Thus, a resistance of the entire semiconductor layer of a TFT which is in an on state is reduced to increase an on current. In addition, a carrier life time due to photoexcitation produced in the high concentration impurity region can be shortened to reduce light sensitivity. |
申请公布号 |
US2016211278(A1) |
申请公布日期 |
2016.07.21 |
申请号 |
US201615074332 |
申请日期 |
2016.03.18 |
申请人 |
Semicondudor Energy Laboratory Co., LTD. |
发明人 |
SHIBATA Hiroshi;MAEKAWA Shinji |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |