CONTACT PROCESS AND CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE

摘要

A contact process for a semiconductor device is described. A substrate having a doped region and a dielectric layer over the doped region is provided. A contact hole is formed through the dielectric layer and exposing the doped region. An insulating liner layer is formed a in the contact hole. A portion of the insulating liner layer at a bottom of the contact hole is etch-removed and over-etching is performed. A conductive epitaxial layer is formed from the doped region in the contact hole, and then the contact hole is filled with a conductive material.

主权项

1. A contact process for a semiconductor device, comprising:
providing a substrate having a doped region and a dielectric layer over the doped region; forming a contact hole through the dielectric layer and exposing the doped region; forming an insulating liner layer in the contact hole; etch-removing a portion of the insulating liner layer at a bottom of the contact hole and performing over-etching; forming a conductive epitaxial layer from the doped region in the contact hole; and filling the contact hole with a conductive material after forming the epitaxial layer.