发明名称 THREE-DIMENSIONAL WORDLINE SHARING MEMORY
摘要 A semiconductor memory includes a first layer including at least a first memory cell, a second layer including at least a second memory cell, and a wordline shared by the first memory cell and the second memory cell. The first and second memory cells can be above or below the wordline and be coupled to different bit lines.
申请公布号 US2016211010(A1) 申请公布日期 2016.07.21
申请号 US201615071686 申请日期 2016.03.16
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 YANG Hao-I;Chen Yi-Tzu;Chang Cheng-Jen;Lin Geng-Cing;Hu Yu-Hao
分类号 G11C11/417 主分类号 G11C11/417
代理机构 代理人
主权项 1. A semiconductor memory, comprising: a bit cell array, comprising: a first memory cell of the bit cell array disposed in a first layer;a second memory cell of the bit cell array disposed in a second layer, the second layer disposed below the first layer;a third memory cell of the bit cell array disposed in a third layer;a fourth memory cell of the bit cell array disposed in a fourth layer, the third layer disposed below the second layer and above the fourth layer; anda wordline shared by the first, second, third and fourth memory cells, wherein the wordline resides below the second memory cell disposed in the second layer and above the third memory cell disposed in the third layer.
地址 Hsin-Chu TW