| 摘要 |
This method for producing a crystal is a method for producing a crystal of silicon carbide, which comprises a preparation step, a contact step, a start step, a first growth step, a temperature lowering step and a second growth step. The preparation step has a step for preparing a solution and a seed crystal. The contact step has a step for bringing the seed crystal into contact with the solution. The start step has a step for starting the growth of a crystal by raising the temperature of the solution to a first temperature range. The first growth step has a step for growing the crystal by pulling the seed crystal, while raising the temperature of the solution from the first temperature range to a second temperature range. The temperature lowering step has a step for lowering the temperature of the solution from the second temperature range to the first temperature range. The second growth step has a step for further growing the crystal by pulling the seed crystal, while raising the temperature of the solution from the first temperature range to the second temperature range. |
