发明名称 |
Phase change memory devices and fabrication methods thereof |
摘要 |
In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.
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申请公布号 |
US7872908(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20090461187 |
申请日期 |
2009.08.04 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
SUH DONG-SEOK;KHANG YOON-HO;NOH JIN-SEO;LENIACHINE VASSILI;SONG MI-JEONG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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