SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

摘要

To provide a SiC power MISFET having stable operation characteristics. In order to solve the problem, a SiC power MISFET of the present invention has a silicon (Si) atomic layer between a gate insulating film and a channel region formed in a surface layer portion of an epitaxial layer formed of SiC. The Silicon (Si) atomic layer is configured from one atomic layer, and has a thickness of approximately 0.5 nm. By forming the silicon (Si) atomic layer, a C-C bond and a Si-Si bond are not easily formed in the surface layer portion of the epitaxial layer, and occurrence of quantum roughness at the interface between the epitaxial layer and the gate insulating film can be suppressed.