发明名称 |
Programmable contact structure and its forming method. |
摘要 |
<p>A programmable semiconductor contact structure and method are provided. A semiconductor substrate has a first patterned conductive layer for forming an interconnect. A first insulating layer overlies the first patterned conductive layer. An opening is formed through the insulating layer to the first patterned conductive layer to form the contact via. A buffer layer overlies portions of the first insulating layer and covers the opening. A third conductive layer overlies the buffer layer. A fourth conductive layer then overlies the integrated circuit. The buffer layer is a material, such as amorphous silicon, which functions as an anti-fuse and can be programmed by application of a relatively high programming voltage. <IMAGE></p> |
申请公布号 |
EP0583119(A1) |
申请公布日期 |
1994.02.16 |
申请号 |
EP19930306053 |
申请日期 |
1993.07.30 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
WEI, CHE-CHIA |
分类号 |
H01L21/28;H01L21/82;H01L23/525;H01L29/41;(IPC1-7):H01L23/525 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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