SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A capacitive element (11) comprising a lower electrode (8), a capacitive insulating film (9) of insulating metal oxide and an upper electrode (10) is formed on a semiconductor substrate (1). A first interconnect layer (14) is formed on a protective insulating film (12) formed to cover the capacitive element (11). A first interlayer insulating film (15) is formed to cover the first interconnect layer (14). A second interlayer insulating film (17) is formed on the first interlayer insulating film (15) through a barrier film (16) for preventing diffusion of hydrogen provided to overlap the capacitive element (11). A second interconnect layer (19) is formed on the second interlayer insulating film (17). Hydrogen content of the first interlayer insulating film (15) is lower than that of the second interlayer insulating film (17).