| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an interdiffusion barrier structure of a dopant in a gate electrode and a method for manufacturing the same. <P>SOLUTION: A structure which reduces and even prevents the diffusion from the NFET side of a gate to the PFET side of a gate in a semiconductor device, and a method for manufacturing the same are disclosed. A diffusion barrier is formed in a common gate of a place of an N/P border between the NFET and the PFET. A diffusion barrier is doped by one or two or more types of ions of for example, oxygen, nitrogen, fluorine, silicon, germanium, or xenon (however not limited to these). By using the diffusion barrier which is disclosed in the invention, the diffusion of ions from the NFET side to the PFET side via a common gate in a CMOS technology semiconductor device node can be greatly reduced and even prevented completely. This further brings about relatively the more high performance of a pair of NFET/PFET. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
