发明名称 APPARATUS AND METHOD FOR FORMING EPITAXIAL GROWTH FILM
摘要 PROBLEM TO BE SOLVED: To provide an epitaxial growth film formation apparatus which can mitigate a possibility of breakage of a susceptor, wafer and other peripheral parts by preventing the susceptor together with the wafer even if a sticking phenomenon of the wafer with the susceptor occurs when removing the wafer on a horizontal disc-like susceptor. SOLUTION: The epitaxial vapor growth film formation apparatus is provided with a horizontal disc-like susceptor 5 to house a wafer W wherein a vapor growth film is formed and a rotary cylinder 6 to hold and rotate the susceptor 5, wherein a plurality of projections 5b provided around the periphery of the susceptor 5 are engaged with a plurality of key-shaped projections 6a provided on the upper side of the rotary cylinder 6. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009087990(A) 申请公布日期 2009.04.23
申请号 JP20070252063 申请日期 2007.09.27
申请人 NUFLARE TECHNOLOGY INC 发明人 ARAI HIDEKI
分类号 H01L21/205;C23C16/458;H01L21/683 主分类号 H01L21/205
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