| 摘要 |
<p>A high purity vitreous silica crucible for lifting a large diameter silicon single crystal ingot is provided to prevent twist or deformation by securing high intensity in a top end part of a crucible opening part. A plurality of vents(12) is formed in a graphite mold(10). A decompression unit is connected to the vent. A quartz molding body(11) is formed by accumulating a quartz powder in an inner surface of the graphite mold. The quartz molding body is maintained in an inner wall by a centrifugal force according to rotation of the graphite mold. A vitreous silica layer is formed by heating the quartz molding body by an arc discharge device(26). The arc discharge device includes a plurality of graphite electrodes(5), an electrode driving unit(4), and a power supply unit. A plurality of graphite electrodes is made of high purity carbon. The electrode driving unit moves the graphite electrode.</p> |
