| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory module for preventing characteristics from being deteriorated by mounting twice as many semiconductor memory chips as that in conventional specifications. Ž<P>SOLUTION: This memory module including semiconductor memory chip is provided with a reference voltage generation circuit for generating a reference voltage to decide a High level and a Low level of one two signals in one of two pads installed in a semiconductor memory chip to which complementary two signals to determine the timing of data transfer are input/output. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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