| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent unread data from being destroyed (overwritten) while restricting reading of stored data. Ž<P>SOLUTION: A method is disclosed for driving a ferroelectric memory device having a plurality of memory cells (MC0-n) stored with data and a memory cell for flag (MCF). The method includes, upon writing to the plurality of memory cells: a step (S1) of reading data from the plurality of memory cells and the memory cell for flag; a step (S2) of determining as to whether the data read from the memory cells for flag is predetermined data ["0"]; a step of (S3) overwriting write data to the plurality of memory cells, and writing reverse data of the predetermined data to the memory cell for flag, when the data read from memory cell for flag is the predetermined data; and a step (S4) of rewriting the data read from the plurality of memory cells, and writing the reverse data to the memory cell for flag, when the data read from the memory cell for flag is the reverse data ["1"]. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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