Method and system for image sensor and lens on a silicon back plane wafer

摘要

A method for forming image sensors includes providing a substrate and forming a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate. The method also includes forming an interlayer dielectric layer overlying the plurality of photo diode regions, forming a shielding layer formed overlying the interlayer dielectric layer, and applying a silicon dioxide bearing material overlying the shielding layer. The method further includes etching portions of the silicon dioxide bearing material to form a plurality of first lens structures, and continuing to form each of the plurality of first lens structures to provide a plurality of finished lens structures.

主权项

1. A method for forming image sensors, the method comprising:
providing a substrate; forming a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate; forming one or more interconnect layers overlying the plurality of photo diode regions; forming an interlayer dielectric layer overlying all the interconnect layers; forming a shielding layer overlying the interlayer dielectric layer, the shielding layer having openings only above the plurality of photo diode regions to allow light to reach the photo diode regions; and forming a plurality of lens structures comprising a silicon dioxide bearing material overlying the shielding layer, wherein the shielding layer comprises openings only underneath the plurality of lens structures and is configured to shield regions not underneath the lens structures.