Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same

摘要

A method for manufacturing a fin field-effect transistor (FinFET) device comprises forming a plurality of fins on a substrate, epitaxially growing a sacrificial epitaxy region between the fins, stopping growth of the sacrificial epitaxy region at a beginning of merging of epitaxial shapes between neighboring fins, and forming a dielectric layer on the substrate including the fins and the sacrificial epitaxy region, wherein a portion of the dielectric layer is positioned between the sacrificial epitaxy region extending from fins of adjacent transistors.

主权项

1. A fin field-effect transistor (FinFET) device, comprising:
a substrate; a first plurality of fins on the substrate corresponding to a first transistor; a second plurality of fins on the substrate corresponding to a second transistor; a first epitaxy region extending between the first plurality of fins; a second epitaxy region extending between the second plurality of fins; and a dielectric layer on the substrate, wherein a portion of the dielectric layer is positioned between the first epitaxy region and the second epitaxy region preventing contact between the first epitaxy region and the second epitaxy region; wherein the first epitaxy region extends over an entirety of the first plurality of fins and the second epitaxy region extends over an entirety of the second plurality of fins; wherein a height of the first epitaxy region is greater than a height of the first plurality of fins and a height of the second epitaxy region is greater than a height of the second plurality of fins; and wherein the height of the second epitaxy region over a first fin of the second plurality fins is different from the height of the second epitaxy region over a second fin of the second plurality fins.