Semiconductor device and method for manufacturing the same

摘要

A semiconductor device includes: a first transistor and a second transistor disposed in or on a silicon substrate; an element isolation structure that isolates the first transistor and the second transistor, the element isolation structure comprising at least one of a first element isolation film disposed in a region of a first well disposed in a formation area of the first transistor, or a second element isolation film disposed in a region of a second well disposed in a formation area of the second transistor, and a third well disposed under the first well in the silicon substrate and is electrically connected to the second well. The first element isolation film or the second element isolation film has a portion that does not extend over a boundary between the first well and the second well.

主权项

1. A semiconductor device comprising:
a first transistor and a second transistor disposed in or on a silicon substrate; a first well disposed in a formation area of the first transistor, and a second well disposed in a formation area of the second transistor, wherein the second well surrounds the first well in a plan view of the silicon substrate; and a third well disposed under an entirety of the first well, but less than an entirety of the second well, and wherein the third well is electrically connected to the second well, wherein the semiconductor device does not include an element isolation structure including an element isolation film disposed in the silicon substrate between the first transistor and the second transistor, and wherein the first transistor is an N-type transistor, the second transistor is a P-type transistor, the first well is a P-well, the second well is an N-well, and the third well is an N-well.