发明名称 Device wafer processing method
摘要 A device wafer processing method includes, a groove forming step in which grooves with a predetermined depth are formed in the front side of a device wafer; a plate attaching step in which a plate is attached to the front side of the wafer through an adhesive; a grinding step in which the wafer is held by a holding table through the plate so as to expose the back side of the wafer, and the back side is ground to expose the grooves at the back side of the wafer, thereby dividing the wafer to form a plurality of chips. The method further includes: a film attaching step in which a film is attached to the back side of the wafer; and a dicing step in which the film is diced along division lines from the side of the back side of the wafer.
申请公布号 US9362174(B2) 申请公布日期 2016.06.07
申请号 US201414566915 申请日期 2014.12.11
申请人 Disco Corporation 发明人 Mizomoto Yasutaka
分类号 H01L21/00;H01L23/34;H01L21/78;H01L21/683;H01L21/304;H01L25/04;H01L21/67;H01L23/00 主分类号 H01L21/00
代理机构 Greer Burns & Crain Ltd. 代理人 Greer Burns & Crain Ltd.
主权项 1. A method of processing a device wafer having devices formed respectively in regions sectioned by a plurality of intersecting division lines on a front side thereof, the method comprising: a groove forming step of forming grooves along the division lines from the front side of the device wafer, the grooves having a depth of not smaller than a finished thickness of the device wafer; a plate attaching step of attaching a plate to the front side of the device wafer through an adhesive after the groove forming step is conducted; a grinding step of holding the device wafer by a holding table through the plate so as to expose a back side of the device wafer, and grinding the back side of the device wafer by grinding means to thin the device wafer down to the finished thickness, thereby exposing the grooves at the back side of the device wafer and dividing the device wafer into individual chips; a film attaching step of attaching a film to the back side of the device wafer after the grinding step is conducted; a dicing step of dicing, after the film attaching step is conducted, the film along the division lines from the side of the back side of the device wafer so as to form the plurality of chips each having the film attached to a back side thereof; and a picking-up step of picking up the individual chips from the plate after the dicing step is conducted; wherein the adhesive is an adhesive having an adhesive force lowered when ultraviolet light is applied thereto; and the chips are picked up after the ultraviolet light is applied to the adhesive, in the picking-up step; further wherein in the picking-up step, a first one of the chips that is picked up through application of the ultraviolet light to that region of the adhesive which corresponds to the first one of the chips, the ultraviolet light being applied through a mask that only exposes the first one of the chips, and thereafter a second one of the chips that is to be picked up next is picked up through application of the ultraviolet light to that region of the adhesive which corresponds to the second one of the chips, the ultraviolet light being applied by moving the mask to expose only the region of the second one of the chips.
地址 Tokyo JP