| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method of a wafer in which a surface side of the wafer is formed to be a flat surface.SOLUTION: A processing method of a semiconductor wafer 2 in which devices 222 are formed in a plurality of regions partitioned by a plurality of division scheduled lines 221 formed on a surface and the devices 222 and another region have irregularities comprises: a SiOfilm coating step of coating the surface of the wafer with a SiOfilm 23; a resist film coating step of coating a recess on a surface of the SiOfilm 23 with a resist film 24; an etching step of etching a salient of the SiOfilm 23 on the surface of the wafer after the resist film coating step to keep a height almost in line with a height of the recess; a resist film removal step of removing the resist film 24 coated on the surface of the SiOfilm 23 which coats the surface of the wafer after the etching process; and a SiOfilm flattening step of flattening the surface of the SiOfilm 23 which coats the surface f the wafer after the resist film removal step.SELECTED DRAWING: Figure 5 |
