PACKAGED POWER SEMICONDUCTOR AND MOUNTED STRUCTURE OF PACKAGED POWER SEMICONDUCTORS

摘要

This packaged power semiconductor (10) is provided with: a power semiconductor chip (20); a lead frame (31) having a surface on which the power semiconductor chip (20) is mounted; a heat dissipation substrate (50) that is in contact with the back surface of the lead frame (31); and an insulating mold resin (60). The insulating mold resin (60) has a back surface from which the heat dissipation substrate (50) is exposed, and has a shape that covers the power semiconductor chip (20) and a portion where the power semiconductor chip (20) is connected to the lead frame (31). In addition, the insulating mold resin (60) comprises a wall (61) that is at right angles to the back surface of the insulating mold resin (60) and is on the outer side of the back surface of the heat dissipation substrate (50). The front end surface of the wall (61) is provided with a projection (62). The packaged power semiconductor (10) is mounted on a heat dissipation member (80) by means of an insulating bonding member (90) in such a manner that the projection (62) abuts on the heat dissipation member (80).