| 发明名称 | Doped barrier layers in epitaxial group III nitrides | ||
| 摘要 | A semiconductor structure having a Group III-N buffer layer and a Group III-N barrier layer in direct contact to form a junction between the Group III-V buffer layer the Group III-N barrier layer producing a two dimensional electron gas (2DEG) channel, the Group III-N barrier layer having a varying dopant concentration. The lower region of the Group III-N barrier layer closest to the junction is void of intentionally introduced dopant and a region above the lower region having intentionally introduced, predetermined dopant with a predetermined doping concentration above 1×1017 atoms per cm3. | ||
| 申请公布号 | US9419125(B1) | 申请公布日期 | 2016.08.16 |
| 申请号 | US201514740703 | 申请日期 | 2015.06.16 |
| 申请人 | RAYTHEON COMPANY | 发明人 | Schultz Brian D.;Torabi Abbas;Chumbes Eduardo M.;Reza Shahed;Hoke William E. |
| 分类号 | H01L29/00;H01L21/00;H01L29/778;H01L29/20;H01L29/205;H01L29/207;H01L29/66;H01L21/02 | 主分类号 | H01L29/00 |
| 代理机构 | Daly, Crowley, Mofford & Durkee, LLP | 代理人 | Daly, Crowley, Mofford & Durkee, LLP |
| 主权项 | 1. A Field Effect Transistor, comprising: a semiconductor structure, comprising: a Group III-N buffer layer;a Group III-N barrier layer in direct contact with the Group III-N buffer layer to form a junction between the Group III-N buffer layer and the Group III-N barrier layer producing a two dimensional electron gas (2DEG) in the one of the layers having the lower one of the band gaps;a gate electrode, disposed between a source electrode and a drain electrode, for modulating charge in the 2DEG; andwherein the Group III-N barrier layer comprises a lower unintentionally doped region closest to the junction and an intentionally doped region above the lower unintentionally doped region. | ||
| 地址 | Waltham MA US | ||