| 摘要 |
Provided is a method for increasing pattern density on a substrate comprising a structure with a patterned layer with a first composition and a sidewall and a cap layer of a second composition formed atop said structure. The sidewall is exposed to a chemical environment and creates a chemically modified sidewall layer of a third composition. The cap layer and an interior, non-modified portion of said structure is removed using an etching process to leave behind said chemically modified sidewall layer. A pattern transfer etch of said sidewall chemically modified layer onto the underlying layer of said substrate is performed. One or more integration operating variables are controlled to achieve target critical dimensions comprising width, height, sidewall angle, line width roughness, and/or line edge roughness of said structure. |
| 主权项 |
1. A method for increasing pattern density of a structure on a substrate using an integration scheme, said integration scheme having one or more integration operating variables, the method comprising:
providing a substrate having a patterned layer of a first composition in a process chamber, said patterned layer comprising at least one structure with a sidewall and a top surface; exposing said sidewall and top surface to a chemical environment to chemically modify said sidewall and top surface of said structure to a predetermined depth by introducing a constituent of said chemical environment to an exposed surface region of said structure and creating a chemically modified sidewall layer and cap layer of a second composition; and removing said cap layer to expose an interior, non-modified portion of said structure; selectively removing said interior, non-modified portion of said structure to leave behind said chemically modified sidewall layer; selecting said chemical environment to include said constituent that modifies an etch resistance of said chemically modified sidewall layer to a class of etching agents used in said selectively removing said interior, non-modified portion, said second composition being more resistant to said class of etching agents than said first composition; and performing a pattern transfer etch of said chemically modified sidewall layer onto an underlying layer of said substrate; wherein said one or more integration operating variables comprises a hydrogen, oxygen, and nitrogen ratio, a process chamber temperature, a thickness of said chemically modified sidewall layer, a water vapor partial pressure, and an exposure time to said chemical environment. |
