| 摘要 |
According to one embodiment of the present invention, a power semiconductor device comprises: a first conductivity type drift region; a second conductivity type body region arranged in an upper inner side of the drift region; a second conductivity type hole accumulation region arranged in a lower portion of the body region wherein the second conductivity type hole accumulation region has an impurity concentration higher than the body region; and a plurality of first conductivity type carrier moving layers arranged in a lower portion of the hole accumulation region and buried in the drift region. Mobility of a carrier is increased by including a gate moving layer, thereby obtaining high current density of the device. |
