| 摘要 |
This semiconductor light-emitting element comprises a first semiconductor layer of a first conductivity type, a light-emitting functional layer that includes a light-emitting layer formed on the first semiconductor layer, and a second semiconductor layer that is formed on the light-emitting functional layer and is of the opposite conductivity type to the first semiconductor layer. The light-emitting layer comprises: a base layer that has a composition that is subjected to stress-strain from the first semiconductor layer and has a plurality of base segments formed in a random mesh shape; and a quantum well structured layer comprising at least one quantum well layer and at least one barrier layer formed on the base layer. The at least one quantum well layer has an InGaN composition, and the In composition increases towards the second semiconductor layer. |
