发明名称 |
METHOD FOR PREPARING COPPER THIN FILM BY USING SINGLE CRYSTAL COPPER TARGET |
摘要 |
The present invention relates to a method for preparing a copper thin film by using a single crystal copper target and, more specifically, to a method for preparing a copper thin film by using a single crystal copper target, the method performing deposition on a sapphire disc substrate with a high-frequency sputtering method by using a single crystal copper target grown by the Czochralski process, thereby preparing a copper thin film with excellent quality with respect to crystallinity. The subject matter of the present invention is a method for preparing a copper thin film by using a single crystal copper target, the method using a disc-shaped single crystal copper target obtained by cutting cylindrical single crystal copper grown by the Czochralski process, so as to perform deposition on a sapphire disc substrate by a high-frequency sputtering method, thereby forming and preparing a copper thin film. |
申请公布号 |
WO2016153090(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
WO2015KR02837 |
申请日期 |
2015.03.23 |
申请人 |
PUSAN NATIONAL UNIVERSITY INDUSTRIAL-UNIVERSITY COOPERATION FOUNDATION |
发明人 |
JEONG, Se-young;KIM, Ji-young;LEE, Seung-hun;LEE, Tae-woo;PARK, Sang-eon;CHO, Chae-ryong |
分类号 |
C23C14/40;C23C14/44 |
主分类号 |
C23C14/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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