发明名称 METHOD FOR PREPARING COPPER THIN FILM BY USING SINGLE CRYSTAL COPPER TARGET
摘要 The present invention relates to a method for preparing a copper thin film by using a single crystal copper target and, more specifically, to a method for preparing a copper thin film by using a single crystal copper target, the method performing deposition on a sapphire disc substrate with a high-frequency sputtering method by using a single crystal copper target grown by the Czochralski process, thereby preparing a copper thin film with excellent quality with respect to crystallinity. The subject matter of the present invention is a method for preparing a copper thin film by using a single crystal copper target, the method using a disc-shaped single crystal copper target obtained by cutting cylindrical single crystal copper grown by the Czochralski process, so as to perform deposition on a sapphire disc substrate by a high-frequency sputtering method, thereby forming and preparing a copper thin film.
申请公布号 WO2016153090(A1) 申请公布日期 2016.09.29
申请号 WO2015KR02837 申请日期 2015.03.23
申请人 PUSAN NATIONAL UNIVERSITY INDUSTRIAL-UNIVERSITY COOPERATION FOUNDATION 发明人 JEONG, Se-young;KIM, Ji-young;LEE, Seung-hun;LEE, Tae-woo;PARK, Sang-eon;CHO, Chae-ryong
分类号 C23C14/40;C23C14/44 主分类号 C23C14/40
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