THIN FILM TRANSISTOR MANUFACTURING METHOD AND THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor manufacturing method and a thin film transistor, which can suppress deterioration and variation in performance.SOLUTION: A manufacturing method of a thin film transistor 1(1B) of the present embodiment includes the steps of: forming an oxide semiconductor layer 3 on one principal surface of a substrate 2; forming a first conductive layer on the oxide semiconductor layer 3 and forming a second conductive layer on the other principal surface of the substrate 2; collectively forming a mask layer on the first conductive layer and second conductive layer; and collectively contacting the first conductive layer and second conductive layer with an etchant to remove a partial region of the first conductive layer and second conductive layer to form a source electrode 6 and a drain electrode 7 on the oxide semiconductor layer 3, and forming a gate electrode 5 on the other principal surface of the substrate 2.SELECTED DRAWING: Figure 9