| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target for generating an evaporation layer having a higher etching rate than an etching rate of a layer evaporated from a sputtering target comprising 50 atom% molybdenum and 50 atom% titanium, concerning the etching rate in a ferricyanide solution.SOLUTION: There is provided a sputtering target containing molybdenum as much as 40 atom% or more, a second metal element of niobium or vanadium as much as 1 atom% or more, and a third metal element which is different from the second metal element selected from titanium, chromium, niobium, vanadium and tantalum as much as 1 atom% or more. An evaporation layer generated by the sputtering target is also provided.SELECTED DRAWING: Figure 1 |
