发明名称 XMR Angle Sensors
摘要 Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions.
申请公布号 US2016356864(A1) 申请公布日期 2016.12.08
申请号 US201615241632 申请日期 2016.08.19
申请人 Infineon Technologies AG 发明人 Zimmer Juergen
分类号 G01R33/09;G01R33/00 主分类号 G01R33/09
代理机构 代理人
主权项 1. A sensor element comprising: a non-elongated xMR element; a first contact region formed on the xMR element and coupled to a first terminal; a second contact region formed on the xMR element and coupled to a second terminal and spaced apart from the first contact region along a first contact axis; and a third contact region formed on the xMR element and coupled to the second terminal and spaced apart from the first contact region along a second contact axis rotated ninety degrees with respect to the first contact axis.
地址 Neubiberg DE