发明名称 Method for the purpose of producing a stencil mask
摘要 PCT No. PCT/AT97/00096 Sec. 371 Date Apr. 30, 1999 Sec. 102(e) Date Apr. 30, 1999 PCT Filed May 13, 1997 PCT Pub. No. WO97/43694 PCT Pub. Date Nov. 20, 1997A method for the purpose of producing a stencil mask, which comprises a sheet having structures in the form of orifices, wherein the method comprises the following sequence of steps: a) selecting a planar, two-dimensional substrate consisting of a specific material comprising a thickness greater than 50 mu m, b) producing a thin layer, the so-called intermediate layer on the upper side of the substrate, c) structuring this intermediate layer by means of a lithographic process with the structures for the mask which is to be produced, d) etching the lower side of the substrate at least in the region of the structures provided for the mask orifices, until the substrate comprises in this region a predetermined membrane thickness less than 50 mu m, e) etching the upper side of the membrane using the structured intermediate layer as a masking layer, in order to form in this membrane the orifices of the mask which orifices correspond to the structures of the intermediate layer, and f) removing the intermediate layer.
申请公布号 US6156217(A) 申请公布日期 2000.12.05
申请号 US19990180268 申请日期 1999.04.30
申请人 IMS-IONEN MIKROFABRIKATIONS SYSTEME GMBH 发明人 HAMMEL, ERNST;LOESCHNER, HANS;RANGELOW, IVAYLO W.
分类号 G03F1/16;G03F1/20;H01L21/027;(IPC1-7):B44C1/22;H01L21/31;C03C25/68;C23F1/08;C25F3/00 主分类号 G03F1/16
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