METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE IN A SILICON BODY, A SURFACE OF SAID SILICON BODY BEING PROVIDED WITH A GRATING AND AN AT LEAST PARTIALLY RECESSED OXIDE PATTERN,申请号KR1020007006766-传众专利搜索

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发明名称	METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE IN A SILICON BODY, A SURFACE OF SAID SILICON BODY BEING PROVIDED WITH A GRATING AND AN AT LEAST PARTIALLY RECESSED OXIDE PATTERN
摘要
申请公布号	KR20010033319(A)	申请公布日期	2001.04.25
申请号	KR1020007006766	申请日期	2000.06.19
申请人		发明人
分类号	H01L21/027	主分类号	H01L21/027
代理机构		代理人
主权项
地址

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